? semiconductor components industries, llc, 2006 january, 2006 ? rev. 0 1 publication order number: nss20300mr6/d NSS20300MR6T1G 20 v, 5 a, low v ce(sat) pnp transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical application are dc?dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. maximum ratings (t a = 25 c) rating symbol max unit collector-emitter voltage v ceo ?20 vdc collector-base voltage v cbo ?30 vdc emitter-base voltage v ebo ?6.0 vdc collector current ? continuous i c ?3.0 adc collector current ? peak i cm ?5.0 a electrostatic discharge esd hbm class 3b mm class c thermal characteristics characteristic symbol max unit total device dissipation, t a = 25 c derate above 25 c p d (note 1) 545 4.3 mw mw/ c thermal resistance, junction?to?ambient r ja (note 1) 230 c/w total device dissipation t a = 25 c derate above 25 c p d (note 2) 106 8.5 w mw/ c thermal resistance, junction?to?ambient r ja (note 2) 118 c/w thermal resistance, junction?to?lead #1 r jl (note 1) r jl (note 2) 48 40 c/w c/w total device dissipation (single pulse < 10 sec.) p dsingle (note 2) 1.75 w junction and storage temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. fr?4 @ 100 mm 2 , 2 oz copper traces. 2. fr?4 @ 500 mm 2 , 2 oz copper traces. device package shipping ? ordering information NSS20300MR6T1G tsop?6 (pb?free) http://onsemi.com case 318g tsop?6 style 6 3000/tape & ree l 4 5 6 3 2 1 collector 1, 2, 5, 6 3 base 4 emitter ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. 20 volts 5.0 amps pnp low v ce(sat) transistor equivalent r ds(on) 78 m device marking vs1 m vs1 = specific device code m = date code = pb?free package (note: microdot may be in either location)
NSS20300MR6T1G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typical max unit off characteristics collector ?emitter breakdown voltage (i c = ?10 madc, i b = 0) v (br)ceo ?20 ? vdc collector ?base breakdown voltage (i c = ?0.1 madc, i e = 0) v (br)cbo ?30 ? vdc emitter ?base breakdown voltage (i e = ?0.1 madc, i c = 0) v (br)ebo ?6.0 ? vdc collector cutoff current (v cb = ?20 vdc, i e = 0) i cbo ? ?0.1 adc collector?emitter cutoff current (v ces = ?20 vdc) i ces ? ?0.1 adc emitter cutoff current (v eb = ?6.0 vdc) i ebo ? ?0.1 adc on characteristics dc current gain (1) (i c = ?1.0 a, v ce = ?1.5 v) (i c = ?1.5 a, v ce = ?2.0 v) (i c = ?2.0 a, v ce = ?2.0 v) h fe 100 100 100 230 ? 400 ? collector ?emitter saturation voltage (note 3) (i c = ?0.10 a, i b = ?0.010 a) (i c = ?1.0 a, i b = ?0.010 a) (i c = ?2.0 a, i b = ?0.02 a) v ce(sat) ? ? ? ?0.010 ?0.127 ?0.250 ?0.015 ?0.145 ?0.320 v base ?emitter saturation voltage (note 3) (i c = ?1a, i b = ?0.010 a) v be(sat) ? ? ?0.85 v base ?emitter turn?on voltage (note 3) (i c = ?2.0 a, v ce = ?3.0 v) v be(on) ? ? ?0.875 v cutoff frequency (i c = ?100 ma, v ce = ?5.0 v, f = 100 mhz) f t 100 ? ? mhz input capacitance (v eb = ?0.5 v, f = 1.0 mhz) cibo ? 650 pf output capacitance (v cb = ?3.0 v, f = 1.0 mhz) cobo ? 100 pf 3. pulsed condition: pulse width 300 sec, duty cycle 2%.
NSS20300MR6T1G http://onsemi.com 3 package dimensions tsop?6 case 318g?02 issue n 0.95 0.037 1.9 0.075 0.95 0.037 mm inches scale 10:1 1.0 0.039 2.4 0.094 0.7 0.028 23 4 5 6 a l 1 s g d b h c 0.05 (0.002) dim min max min max inches millimeters a 0.1142 0.1220 2.90 3.10 b 0.0512 0.0669 1.30 1.70 c 0.0354 0.0433 0.90 1.10 d 0.0098 0.0197 0.25 0.50 g 0.0335 0.0413 0.85 1.05 h 0.0005 0.0040 0.013 0.100 j 0.0040 0.0102 0.10 0.26 k 0.0079 0.0236 0.20 0.60 l 0.0493 0.0610 1.25 1.55 m 0 10 0 10 s 0.0985 0.1181 2.50 3.00 ____ notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. m j k style 6: pin 1. collector 2. collector 3. base 4. emitter 5. collector 6. collector soldering footprint* *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
NSS20300MR6T1G http://onsemi.com 4 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 nss20300mr6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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